1) A common base configuration of a pnp transistor is analogous to _____________? of a JFET a. common source configuration b. common drain configuration c. common gate configuration d. none of the above
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2) In a JFET, IDSS is known as ________________? a. drain to source current b. drain to source current with gate shorted c. drain to source current with gate open d. none of the above
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3) In a certain CS JFET amplifier, RD= 1kO , RS= 560 O , VDD=10V and gm= 4500 µS. If the source resistor is completely bypassed, the voltage gain is ________________? a. 450 b. 45 c. 2.52 d. 4.5
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4) A certain p-channel E-MOSFET has VGS(th) = -2V. If VGS= 0V, the drain current is ____________? a. 0 mA b. ID(on) c. maximum d. IDSS
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5) A certain D-MOSFET is biased at VGS = 0 V. Its data sheet specifies IDSS = 20mA and VGS(off) = -5 V. The value of the drain current is _____________? a. 20 mA b. 0 mA c. 40 mA d. 10 mA
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6) At cut-off, the JFET channel is _____________? a. at its widest point b. completely closed by the depletion region c. extremely narrow d. reverse baised
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7) A certain JFET data sheet gives VGS(off) = -4 V. The pinch-off voltage Vp is _____________? a. +4 V b. -4 V c. dependent on VGS d. data insufficient
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8) The source terminal of a JEFT corresponds to _____________ of a vacuum tube? a. plate b. cathode c. grid d. none of the above
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9) The channel of a JFET is between the ________________? a. gate and drain b. drain and source c. gate and source d. input and output
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10) The output characteristics of a JFET closely resemble the output characteristics of a ___________ valve? a. pentode b. tetrode c. triode d. diode
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