Electronic Devices & Circuits Test Questions - Set 6

1)   Stability of a transfer gain is generally defined as the reciprocal of _______

a. Resistivity
b. Conductivity
c. Sensitivity
d. Desensitivity
Answer  Explanation 

ANSWER: Sensitivity

Explanation:
No explanation is available for this question!


2)   What are the consequences over the non-linear distortion by the inception of negative feedback?

a. Level of non-linear distortion goes on increasing
b. Level of non-linear distortion goes on decreasing
c. Level of non-linear distortion undergoes stability
d. None of the above
Answer  Explanation 

ANSWER: Level of non-linear distortion goes on decreasing

Explanation:
No explanation is available for this question!


3)   According to the property of tuned circuit used in LC oscillators, the decay rate is proportional to________

a. Shape & size of current pulse
b. Time constant
c. Both a and b
d. None of the above
Answer  Explanation 

ANSWER: Time constant

Explanation:
No explanation is available for this question!


4)   Which among the following measures is/are adopted/used for improving the frequency stability in Colpitt's oscillator?

a. Clapp oscillator
b. Temperature stabilized chamber
c. Voltage regulators
d. All of the above
Answer  Explanation 

ANSWER: All of the above

Explanation:
No explanation is available for this question!


5)   Which among the following oscillators are specifically preferred at high frequencies?

a. LC oscillators
b. RC oscillator
c. Both a and b
d. None of the above
Answer  Explanation 

ANSWER: LC oscillators

Explanation:
No explanation is available for this question!


6)   Which among the below stated parameters gets affected due to drift region in the power transistor?

a. Breakdown voltage
b. On-state losses
c. Switching time
d. All of the above
Answer  Explanation 

ANSWER: All of the above

Explanation:
No explanation is available for this question!


7)   Which types of power transistors have the capability to withstand the higher junction temperatures?

a. Silicon power transistors
b. Germanium power transistors
c. Both a and b
d. None of the above
Answer  Explanation 

ANSWER: Silicon power transistors

Explanation:
No explanation is available for this question!


8)   Which among the below mentioned reasons is/are responsible for the occurrence of second breakdown phenomenon in power BJT?

a. Large current
b. Distribution of current in a non-uniform manner
c. Excessive power dissipation
d. All of the above
Answer  Explanation 

ANSWER: All of the above

Explanation:
No explanation is available for this question!


9)   What is the significance of adopting an interdigitated structure of power transistors?

a. Prevention of current crowding
b. Maintenance of reasonable current densities
c. Both a and b
d. None of the above
Answer  Explanation 

ANSWER: Both a and b

Explanation:
No explanation is available for this question!


10)   Which resistance plays a significant role in stabilization of Q-point for self-biasing circuit of BJT?

a. Emitter resistance
b. Collector resistance
c. Source resistance
d. Drain resistance
Answer  Explanation 

ANSWER: Emitter resistance

Explanation:
No explanation is available for this question!


11)   Which among the below mentioned devices acts as a driver in CMOS Inverter Circuit?

a. PMOS
b. NMOS
c. Both a and b
d. None of the above
Answer  Explanation 

ANSWER: NMOS

Explanation:
No explanation is available for this question!


12)   Which among the following are specifically the advantages of bipolar design technology?

A. High input resistance at low frequencies
B. Zero input bias current
C. High voltage gain
D. High value of transconductance


a. A & B
b. A & C
c. B & D
d. C & D
Answer  Explanation 

ANSWER: C & D

Explanation:
No explanation is available for this question!


13)   The value of transconductance decreases in simplified low frequency equivalent circuit of n-channel MOSFET due to increase in the value of _______

a. Source resistance
b. Load resistance
c. Both a and b
d. None of the above
Answer  Explanation 

ANSWER: Source resistance

Explanation:
No explanation is available for this question!