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1) Which among the below mentioned assertions is not a considerable factor to design a biasing circuit? a. Position of Q point b. Value of collector current at Q point c. Maximum output swing without generating any distortion d. Transistor biasing in the circular portion of its transfer characteristics
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2) Where should be the position of Q point on the load line, if the transistor is used for amplification purpose? a. At the point of inception (initial point) b. At the center c. At the eventual point (final point) d. None of the above
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3) The slope of AC load line is usually ____________ a. Higher than slope of DC load line b. Smaller than slope of DC load line c. Similar as that of DC load line d. None of the above
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4) Which capacitor is used to block DC portion by allowing to pass only AC portion of the amplified signal to load? a. Input Coupling Capacitor b. Bypass Capacitor c. Output Coupling Capacitor d. All of the above
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5) What is the phase-shift between input and output voltages of CE amplifier? a. 90° b. 120° c. 180° d. 270°
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6) Which among the below assertions is not a salient feature/ property of CE amplifier? a. High voltage gain b. High current gain c. High input resistance d. High output resistance
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7) Which region/s in frequency response curve of an amplifier maintains the constant level of gain and output voltage? a. Low Frequency Region b. Mid Frequency Region c. High Frequency Region d. All of the above
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8) Why do the internal capacitances of transistor at low frequencies treated as open circuits by completely neglecting their effects in analysis? a. Due to high reactance b. Due to low reactance c. Due to moderate reactance d. None of the above
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9) Which capacitance/s in hybrid π model represent/s the storage of excess minority carriers at the base emitter junction? a. Diffusion capacitance b. Transition capacitance c. Both a and b d. None of the above
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10) Which among the following plays a cardinal role in providing the transition capacitance in hybrid π model? a. Forward biased base-emitter junction b. Reverse-biased collector base junction c. Forward biased collector base junction d. Reverse-biased base-emitter junction
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