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1) What is the connection configuration of swamping resistor in case of a differential amplifier? a. In series with each emitter b. In series with each collector c. In parallel with each collector d. In parallel with each emitter
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2) Which transistor array is essential in construction of a mirror circuit where the formation of diode takes place by an adjacent transistor? a. CA3081 b. CA3046 c. CA3086 d. CA3083
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3) What will be the designing components for designing second order low pass filter at a high cut-off frequency of 1kHz assuming C = 0.0047μ F along with consideration of standard pot values? a. R2, R3 = 33k Ω, C1 = C2 = 0.0047μ F, R1 = 27k Ω & Rf = 15.8k Ω b. R2 = R3 = 66k Ω, C1 = C2 = 0.0047μ F, R1 = 35k Ω & Rf = 60k Ω c. R2 = R3 = 51k Ω, C1 = C2 = 0.0047μ F, R1 = 67k Ω & Rf = 70k Ω d. None of the above
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4) Which among the following parameters is usually only specified in dual and quad level Op-amps which is precisely known as amplifier to amplifier coupling? a. Average Temperature coefficient b. Channel Separation c. Gain-Bandwidth Product d. Offset V & I Stability
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5) The cardinal characteristics of BJT in terms of applicable functionalities include____. a. Linear amplification b. Boosting of an electrical signal c. Act as an electronic switch d. All of the above
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6) Which region / terminal of BJT undergoes through the phase of heavy doping in accordance to the function associated with the supply of majority charge carriers to base of transistor? a. Emitter b. Base c. Collector d. All of the above
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7) Why is the collector region of transistor made larger as compared to emitter region from the physical spacing point of view by reducing the probabilty of transistor inverting? a. For maintenance of requisite amount of doping level b. For maintenance of similar polarity with respect to base c. For maximum power dissipation d. For maximum allowance of current flow
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8) Which statements approves to be precise in case of FR biasing for normal working strategy and operation of transistor?
A. Emitter-base junction must be forward biased B. Collector-base junction must be reversed biased C. Emitter-base junction must be reversed biased D. Collector -base junction must be forward biased a. A & C b. A & B c. B & D d. C & D
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9) Current generation to small extent takes place in transistor because of minority charge carriers irrespective of the majority charge carriers can be termed as _______. a. Recombination Current b. Collector Junction Current c. Emitter Junction Current d. Leakage Current
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10) Which type of transistor circuit configuration/s yields the phase-shift of about 180 °? a. CC b. CB c. CE d. All of the above
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11) The collector to base current with emitter open circuit configuration in CB mode is extensively dependent on temperature as a result of ________. a. Thermally generated minority carriers b. Thermally generated majority carriers c. Thermally generated majority as well as minority carriers d. None of the above
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12) The phenomenon of thermal runaway occurs due to maximum and simultaneous increase in power dissipation and _________ beyond safe operating value which ultimately results in causing damage to transistor. a. Collector Current b. Emitter Current c. Base Current d. All of the above
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13) What is the value of base current if the common base circuit configuration offers an emitter current of 3 mA, collector current of 1.5 mA along with the reverse saturation current is 11 mA? a. 1.5 mA b. 3 mA c. 0.15 mA d. 0.20 mA
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14) The greater level of signal distortion that can be managed by transistor can be visualized in the input static characteristics of common base configuration due to variation in input resistance with respect to ________. a. Base to emitter voltage b. Base to collector voltage c. Base to base voltage d. None of the above
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15) Which type of connection/s is/are rarely employed for audio-frequency circuits due to assortments in input & output resistances in addition to current gain less than unity? a. CC b. CB c. CE d. All of the above
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16) Which rule clarifies an ideology of referring the resistance from one part of transistor to another of its parts similar to the strategy of using primary & secondary winding impedances of a transformer? a. Alpha rule b. Beta rule c. Gamma rule d. None of the above
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17) The saturation condition of transistor implies that _______. a. Collector current has highest possible value b. Entire Vcc gets dropped across load resistor c. It acts as a closed switch with negligible value of resistance d. All of the above
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18) What is an essential possible condition of biasing for a transistor to operate in an active region? a. Forward biasing of emitter base & collector base junctions b. Reverse biasing of emitter-base & collector-base junctions c. Forward biasing of emitter base & Reverse biasing of collector-base junctions d. Reverse biasing of emitter-base & Forward biasing of collector-base junctions
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19) Which operating region of BJT enables Emitter-base & Collector-base junctions to undergo perfect short-circuit configuration? a. Active Region b. Saturation Region c. Cut-off Region d. None of the above
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20) The current source acting as a function of variable in N-P-N transistor DC model is renowned as _______. a. Dependent Source b. Controlled Source c. Both a & b d. None of the above
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