MCQs: During gate recovery time_____________?
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MCQs: During reverse recovery time__________________?
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MCQs: Which of the following is true about SIT?
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MCQs: During which time maximum conduction spreading take place in the thyristor during turn ON?
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MCQs: A GTO can be turned on by applying___________?
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MCQs: SITH is also known as___________?
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MCQs: The typical time of rising time lies between______________?
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MCQs: The reverse recovery time of diode is trr = 3 μs and the rate off all of the diode current is di/dt = 30 A/μs. The storage charge current QRR is___________?
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MCQs: Maximum power loss occurs during_________________?
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MCQs: Spread time is defined as the interval during which_____________?
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MCQs: The turn-on time of an SCR with inductive load is 20 µs. The puls train frequency is 2.5 KHz with a mark/space ratio of 1/10, then SCR will___________?
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MCQs: A power MOSFET has three terminals called___________?
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MCQs: Rise time is defined by the interval when____________?
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MCQs: A modern power semiconductor device that combines the characteristic of BJT and MOSFET is_____________?
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MCQs: Delay time is defined by the interval when_______________?
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MCQs: Which one is most suitable power device for high frequency (>100 KHz) switching application?
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MCQs: Snubber circuit is used with SCR_________________?
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MCQs: Why resistor is used in Snubber circuit_________________ ?
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MCQs: What may happen high dV / dt____________?
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MCQs: Thermal voltage VT can be given by____________?
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