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MCQs: The typical time of rising time lies between______________?
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MCQs: The reverse recovery time of diode is trr = 3 μs and the rate off all of the diode current is di/dt = 30 A/μs. The storage charge current QRR is___________?
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MCQs: Maximum power loss occurs during_________________?
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MCQs: Spread time is defined as the interval during which_____________?
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MCQs: The turn-on time of an SCR with inductive load is 20 µs. The puls train frequency is 2.5 KHz with a mark/space ratio of 1/10, then SCR will___________?
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MCQs: A power MOSFET has three terminals called___________?
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MCQs: Rise time is defined by the interval when____________?
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MCQs: A modern power semiconductor device that combines the characteristic of BJT and MOSFET is_____________?
Category: Electrical Engineering Questions, Published by: teswesm
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MCQs: Delay time is defined by the interval when_______________?
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MCQs: Which one is most suitable power device for high frequency (>100 KHz) switching application?
Category: Electrical Engineering Questions, Published by: teswesm
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MCQs: Snubber circuit is used with SCR_________________?
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MCQs: Why resistor is used in Snubber circuit_________________ ?
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MCQs: What may happen high dV / dt____________?
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MCQs: Thermal voltage VT can be given by____________?
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MCQs: What happen due to high di / dt____________?
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MCQs: IGBT combines the advantages of_____________?
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MCQs: Which of the following is used in SCR to protect from high dV / dt__________________?
Category: Electrical Engineering Questions, Published by: teswesm
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MCQs: COOLMOS device can be used in application up to power range of___________?
Category: Electrical Engineering Questions, Published by: teswesm
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MCQs: What is used to protect a thyristor from high di / dt conditions__________?
Category: Electrical Engineering Questions, Published by: teswesm
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MCQs: Compared to transistor, _________ have lower on state conduction losses and higher power handling capability?
Category: Electrical Engineering Questions, Published by: teswesm
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